PART |
Description |
Maker |
MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器) 4分(12k × 8/256K × 16)位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
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Fujitsu Limited
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27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
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Macronix International Co., Ltd.
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IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道,双循环取消选择静态RAM 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100 256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
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Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc
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AM29LV081B AM29LV081B-120EC AM29LV081B-120ECB AM29 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory Gate Driver; Package: PG-DSO-8; RthJA (max): -; 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位米8位)的CMOS 3.0伏特,只有扇区擦除闪 CORECONTROL™ Gate Driver 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位1米8位)的CMOS 3.0伏特,只有扇区擦除闪
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AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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GS72108TP-8I GS72108J-10 GS72108J-10I GS72108J-12 |
256K X 8 STANDARD SRAM, 12 ns, PDSO44 256K X 8 STANDARD SRAM, 10 ns, PDSO44 TV 4C 4#12 SKT RECP 256K × 8Mb异步SRAM 256K x 8 2Mb Asynchronous SRAM 256K × 82Mb异步SRAM TV 15C 14#20 1#16 SKT RECP 256K × 8Mb异步SRAM 256K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, SOJ-36 TV 5C 5#16 PIN RECP 256K × 8Mb异步SRAM 256K X 8 STANDARD SRAM, 8 ns, PDSO36 0.400 INCH, SOJ-36 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 256K × 8Mb异步SRAM
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ETC GSI Technology, Inc. Electronic Theatre Controls, Inc. GSI[GSI Technology]
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AM29F040-90PCB AM29F040-90FCB AM29F040-90ECB AM29F |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 × 8位)的CMOS 5.0伏只,扇区擦除闪 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDIP32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44 256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM RES, MTF 20K 1/4W 2% ER 16C 16#16 SKT PLUG ER 13C 3#8 3#12 7#16 SKT PLUG 10ns 256K X 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
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SRAM Electronic Theatre Controls, Inc. GSI[GSI Technology] N.A. ETC
|
AS6WA25616 |
3.0V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor
|
AS6UA25617 AS6UA25617-BI AS6UA25617-BC AS6UA25617- |
1.65V to 3.6V 256K x 16 Intelliwatt low power CMOS SRAM with two chip enables 1.65V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with two chip enables
|
Alliance Semiconductor
|
AM29F400AB-65EC AM29F400AB-65EI AM29F400AB-65FC AM |
Dual Retriggerable Monostable Multivibrators 16-SO -40 to 85 512K X 8 FLASH 5V PROM, 60 ns, PDSO48 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDSO48 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 x 8-Bit/26244 x 16位).0伏的CMOS只,扇区擦除闪存 4 Megabit (524/288 x 8-Bit/262/144 x 16-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory Dual Retriggerable Monostable Multivibrators 16-TVSOP -40 to 85 Dual Retriggerable Monostable Multivibrators 16-SOIC -40 to 85 4 Megabit (524,288x8-bit/262, 144x16 bit) CMOS 5.0Volt-only, sector erase flash memory
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AMD Advanced Micro Devices, Inc.
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